| 发明名称 | Etching method, etching apparatus, and storage medium | ||
| 摘要 | Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit. | ||
| 申请公布号 | US9362149(B2) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201414479466 | 申请日期 | 2014.09.08 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Muraki Yusuke;Kasai Shigeru;Suzuki Tomohiro |
| 分类号 | H01L21/67;H01L21/311;H01L21/768 | 主分类号 | H01L21/67 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method of etching a silicon oxide film formed on a substrate, comprising: supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and after producing the reaction product, heating the reaction product to remove the reaction product, wherein modifying the silicon oxide film and heating the reaction product are performed using one chamber, and wherein in heating the reaction product, the reaction product is selectively heated by a heating unit without heating the substrate. | ||
| 地址 | Tokyo JP | ||