发明名称 |
ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit capable of obtaining sufficient protection characteristics against discharge of static electricity without increasing a circuit area for reducing impedance of power supply wiring and the like.SOLUTION: An electrostatic protection circuit includes: a plurality of clamp circuits connected in series between a node N1 and a node N3; a resistor R1 connected between the node N3 and a node N2; a discharge circuit being connected between the node N1 and the node N2 and brought into a conduction state when a potential difference generated between both ends of the resistor R1 is equal to a first value or more; a transistor connected to at least one of the plurality of clamp circuits in parallel; a resistor R2 connected between a source and a gate of the transistor; and a control circuit bringing the transistor into the conduction state when the potential difference generated between both the ends of the resistor R1 is equal to a second value or more.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016119389(A) |
申请公布日期 |
2016.06.30 |
申请号 |
JP20140258195 |
申请日期 |
2014.12.22 |
申请人 |
SEIKO EPSON CORP |
发明人 |
IKEDA MASUHIDE |
分类号 |
H01L21/822;H01L27/04;H01L27/06;H03K19/003 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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