| 摘要 |
According to one embodiment, a semiconductor light emitting device (1) includes a semiconductor layer (80), an electrode pad (70), a first electrode (60), a second electrode (40) and a layer (50). The semiconductor layer (80) includes a first semiconductor layer (10), a second semiconductor layer (20), and a light emitting layer (30). The electrode pad (70) is provided in adjacent to the semiconductor layer (80). The first electrode (60) is connected to the electrode pad (70) with one end, extends from the electrode pad (70), and is connected to the first semiconductor layer (10). The second electrode (40) is connected to the second semiconductor layer (20). The layer (50) with lower conductivity is provided between part of the first semiconductor layer (10) and part of the first electrode (60). The first electrode (60) has an electrode width. The electrode width is in a direction perpendicular to a direction in which the first electrode (60) extends. The electrode width decreases with distance from the electrode pad (70). |
