发明名称 |
Electronic devices and components for high efficiency power circuits |
摘要 |
An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package. |
申请公布号 |
US9401341(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201414336287 |
申请日期 |
2014.07.21 |
申请人 |
Transphorm Inc. |
发明人 |
Wu Yifeng |
分类号 |
H01L21/00;H01L23/00;H02M7/00;H03K17/567;H01L23/495;H01L27/06;H01L23/552;H01L25/18;H01L27/085 |
主分类号 |
H01L21/00 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A method of forming an electronic component, comprising:
providing a pair of transistors, wherein a first transistor of the pair of transistors is a III-N transistor; providing a rectifying device; enclosing the pair of transistors and the rectifying device in a single package; electrically connecting a gate electrode of the III-N transistor to a first lead of the single package or to a conductive structural portion of the single package, electrically connecting a drain electrode of the III-N transistor to a second lead of the single package and to a first electrode of the rectifying device, and electrically connecting a second electrode of the rectifying device to a third lead of the single package. |
地址 |
Goleta CA US |