EPITAXIAL WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of improving optical output while reducing a forward voltage by intentionally generating no threading dislocation.SOLUTION: The epitaxial wafer includes: a c-plane GaN substrate; an n-type conductive layer which is formed over a principal surface at one side of the c-plane GaN substrate; and a luminescent layer which is formed over the principal surface of the n-type conductive layer, and which includes a multi quantum well layer including a quantum well layer and a barrier layer which are laminated alternately. The quantum well layer is constituted of a first InGaN layer, and the barrier layer includes a second InGaN layer which contains an In composition smaller than that of the first InGaN layer.SELECTED DRAWING: Figure 3