发明名称 DRIVING CIRCUIT FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a driving circuit for a semiconductor device which can suppress an increase in continuity loss at high frequencies without lowering switching characteristics of a semiconductor switch and the semiconductor device which is usable as a wide-band high-frequency switch and has superior switching characteristics. SOLUTION: The semiconductor switch 1 is composed of two MOS transistors 1a and 1b and has a couple of main terminals 2a and 2b connected to a feed line for a high-frequency signal and a couple of input terminals 3a and 3b supplied with a control signal, and the driving circuit 10 is connected between the input terminals 3a and 3b. The driving circuit 10 has a driving power source 11 which supplies the control signal between the input terminals 3a and 3b and a noise eliminating filter 12 which is inserted between the input terminals 3a and 3b and the driving power source 11 and eliminates common-mode noise. The noise eliminating filter 12 has equal-constant conductors L1 and L2 inserted between the input terminals 3a and 3b and the driving power source 11.
申请公布号 JP2002252553(A) 申请公布日期 2002.09.06
申请号 JP20010047593 申请日期 2001.02.23
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KISHIDA TAKASHI;KOBAYASHI ATSUSHI;SUZUMURA MASAHIKO;SUZUKI YUJI;HAYAZAKI YOSHIKI;SHIRAI YOSHIFUMI;TAKANO KIMIMICHI;YOSHIDA TAKESHI;YOSHIHARA TAKAAKI
分类号 H03K17/16;H03K17/04;H03K17/687 主分类号 H03K17/16
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