METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to establish a stable fabricating method of a mask read-only-memory(ROM) by making photoresist not formed on an Al wiring arranged on each adjoining element region. CONSTITUTION: A gate electrode(8) is formed via a gate insulation film on a semiconductor substrate(1). A source/drain region is formed in a position adjacent to the gate electrode. The Al wiring(15) is formed via an interlayer insulation film that covers the gate electrode. Impurity ions are implanted into the surface layer of the substrate by using the Al wiring and photoresist(18) formed on the Al wiring as a mask.