| 摘要 |
PURPOSE:To form a diffraction grating on a desired region in a desired size by removing a thin film coating a substrate by a desired spot to open a window and etching only the spot of the window in a grating form. CONSTITUTION:A nonetchable thin film 10 is formed on a semiconductor substrate, and a desired window is opened by the photolithographic technique to disclose the substrate at the spot A of this window 11. A photoresist 12 film is formed by spin coating, and interference exposure is carried out with two luminous fluxes to form a diffraction grating by development. A desired diffraction grating 13 is formed on a desired region A by etching this pattern. |
