发明名称 RESIST TREATING METHOD
摘要 PURPOSE: A resist treating method is provided to rapidly clean double sides of an object to be processed and improve throughput by coping with various treating processes included in a photolithography process. CONSTITUTION: A carrier station(3) loads/unloads a carrier(2) in which the object to be processed is stored. A convey mechanism conveys an object taken out from the carrier station. At least one cleaning mechanism cleans the object, arranged along a convey path(6) on which the convey mechanism conveys the object. An object reversing mechanism(10) reveres the object, arranged along the convey path.
申请公布号 KR100354547(B1) 申请公布日期 2002.09.16
申请号 KR20000048569 申请日期 2000.08.22
申请人 OKYO ELECTRON KYUSHU LIMITED;TOKYO ELECTRON LIMITED 发明人 MATSUKAWA HIROYUKI;YONEMIZU AKIRA;MATSUSHITA MICHIAKI;FUKUDA TAKAHIDE;FUJIMOTO AKIHIRO;TAKEKUMA TAKASHI;YAEGASHI HIDETAMI
分类号 H01L21/304;B08B1/04;B08B3/04;B08B3/12;H01L21/00;H01L21/311;H01L21/677;(IPC1-7):H01L21/304 主分类号 H01L21/304
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