| 摘要 |
<p>A new type of a semiconductor material is disclosed which consists of a β-SiC:metal carbide alloy having the general formula Siw(metal 1)x(metal 2)y(metal 3)z C, where w+x+y+z = 1 and 1>w>0. The metals are selected from the group consisting of Ti, Hf, Zr, V, Ta, Mo, W and Nb, with Ti, Hf, and Zr preferred. By selecting appropriate proportions of metal carbide and SiC, the alloy's bandgap may be tailored to any desired level between the bandgaps of the metal carbide and SiC. Semiconductor devices are preferably formed by epitaxially growing a layer of the new alloy upon a substrate (6) having a β-SiC or TiC type crystal structure. In addition to retaining the benefits of single-bandgap β-SiC with certain advantages, the new alloys make it possible to implement various electrical devices that cannot be achieved with β-SiC, and also have a potential for bandfolded superlattices for infrared detectors and lasers.</p> |
