| 摘要 |
A thermopile radiation detector comprises thermoelements developed on a silicon chip. The silicon chip is made by micromechanical processes used in the manufacture of integrated circuits. An originally relatively thick, plate-shaped silicon chip (1) is pared down, leaving a relatively thick border (2) and a relatively thin, meander- or spiral-shaped strip (3) joined at one end (13) only to the border (2). The so-called ''cold'' thermocontacts are located on the border (2) of the chip (1) in the region of the end (13) of the strip (3) and the so-called ''hot'' thermocontacts are located on the other, free end (14) of the thin strip (3). As a result of this construction, a relatively large thermoelectric signal is produced for a given infrared radiation even for a relatively small chip surface. |
