| 摘要 |
A semiconductor device includes at least one wiring layer (16, 23) containing aluminum as the major constituent and provided through an insulating film (12) on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film (13) having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fludity to and flatten the heat resistant high molecular organic film. |
