| 摘要 |
A semiconductor device where high voltage CMOS transistors and low voltage CMOS transistors are installed on a single chip, is manufactured by a silicon gate CMOS process. In order to reduce the number of repetitions of photolithographic process, low voltage N channel transistor domains and high voltage P channel transistor domains are simultaneously implanted by B ion, and low voltage P channel transistor domains and high voltage N channel transistor domains are simultaneously implanted by P ion.
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