发明名称 METHOD FOR FORMING FINE GRATING
摘要 PURPOSE:To provide a method for forming a relief type fine grating which consists of recessed and projecting parts formed at cyclic intervals on the surface of an optical functional element using a compound semiconductor. CONSTITUTION:The method for forming a fine grating comprises the following four stages: (1) the first stage for placing a compound semiconductor in a vessel which can be evacuated to vacuum; (2) the second stage for forming the mask layer 12 consisting of a monoatomic or several-atomic layer on the surface of the compound semiconductor substrate 11; (3) the third stage for irradiating with the reactive gas 14 to or allowing it to contact with the surface of the masked compound semiconductor substrate 11 and at the same time for irradiating the surface of the masked substrate 11 with electron beams 13; (4) the fourth stage for allowing the etching of the electron beam irradiated region 15 with the reactive gas 14 to proceed after changing the region to be irradiated with the electron beam 13 from the region 15 to the adjacent region. Further, by repeating the stages (3) and (4) in a spatially successive manner, the fine grating can be formed in a stepwise worked shape.
申请公布号 JPH06342103(A) 申请公布日期 1994.12.13
申请号 JP19930131963 申请日期 1993.06.02
申请人 NEC CORP 发明人 SUGIMOTO YOSHIMASA
分类号 G02B5/18;G02B6/12;G02B6/122;G02B6/13;(IPC1-7):G02B5/18 主分类号 G02B5/18
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