发明名称 |
SILICON NITRIDE POROUS BODY AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride porous body which has a porous structure with a large average pore size and large thermal conductivity and small thermal expansivity of a cut-off test piece, and is preferably used for a gas and/or solution purification part of a ceramic filter or the like. SOLUTION: The silicon nitride porous body is obtained by nitriding a formed body having a metal silicon as a main component and carrying out high temperature heat treatment at a temperature higher than a nitriding temperature, and is characterized by having the porous structure with a average pore size of 3 μm or larger and containing at least one kind of elements selected from the group consisting of II group A and III group A, and III group B and IV group B including a lanthanoid element. |
申请公布号 |
JP2002284586(A) |
申请公布日期 |
2002.10.03 |
申请号 |
JP20010087912 |
申请日期 |
2001.03.26 |
申请人 |
NGK INSULATORS LTD |
发明人 |
INOUE KATSUHIRO;MORIMOTO KENJI;MASUDA MASAAKI;KAWASAKI SHINJI;SAKAI HIROAKI |
分类号 |
B01D39/20;B01D53/22;B01D53/86;B01D53/94;B01D71/02;B01J27/24;B01J32/00;B01J35/04;C04B35/584;C04B35/591;C04B38/00 |
主分类号 |
B01D39/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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