发明名称 SILICON NITRIDE POROUS BODY AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a silicon nitride porous body which has a porous structure with a large average pore size and large thermal conductivity and small thermal expansivity of a cut-off test piece, and is preferably used for a gas and/or solution purification part of a ceramic filter or the like. SOLUTION: The silicon nitride porous body is obtained by nitriding a formed body having a metal silicon as a main component and carrying out high temperature heat treatment at a temperature higher than a nitriding temperature, and is characterized by having the porous structure with a average pore size of 3 μm or larger and containing at least one kind of elements selected from the group consisting of II group A and III group A, and III group B and IV group B including a lanthanoid element.
申请公布号 JP2002284586(A) 申请公布日期 2002.10.03
申请号 JP20010087912 申请日期 2001.03.26
申请人 NGK INSULATORS LTD 发明人 INOUE KATSUHIRO;MORIMOTO KENJI;MASUDA MASAAKI;KAWASAKI SHINJI;SAKAI HIROAKI
分类号 B01D39/20;B01D53/22;B01D53/86;B01D53/94;B01D71/02;B01J27/24;B01J32/00;B01J35/04;C04B35/584;C04B35/591;C04B38/00 主分类号 B01D39/20
代理机构 代理人
主权项
地址