| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth method of compound semiconductor single crystal which can improve crystallinity of a layer grown after a substrate needs to be taken out to the atmosphere, when a plurality of compound semiconductor layers are epitaxially grown. SOLUTION: An As amorphous silicon film 20 is formed on an epitaxially grown compound semiconductor layer 3 before a substrate is taken out to the atmosphere. The substrate is transferred to another equipment, the amorphous film 20 is removed, and further compound semiconductor is epitaxially grown. Since the surface of the compound semiconductor layer 3 is covered with an amorphous film, the substrate is not contaminated and a natural oxide film is not formed, when the substrate is taken out to the atmosphere. As a result, high cleanness is ensured, and crystallinity of a compound crystal layer which is to be grown later is excellent. |
