| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an analytical method by SIMS-(secondary ion mass spectrometry) whereby the surface of a sample which is to be measured originally is sensed accurately to make the impurity concentration of a semiconductor substrate measurable accurately in the vicinity of the surface, in the technique for forming a cap-Si layer (cap-Si wafer) on the surface of the measured sample. SOLUTION: In this analytical method, there are provided a measured-sample preparing process for superimposing on a surface 2 of a semiconductor substrate 1 of a measuring object an Si layer 5 containing a different impurity element from the impurity element contained in the semiconductor substrate 1 which is to be sensed by SIMS, and an SIMS measuring process for projecting a primary ion beam on the surface of the formed Si layer 5 by the measured-sample preparing process to perform a mass spectrometry. Further, in the case of the SIMS measuring process, the impurity element contained in the Si layer 5 is used as a surface sensing monitor for sensing the surface of the semiconductor substrate which is to be measured originally. Thereby, the surface of the semiconductor substrate is sensed accurately to make the impurity concentration of the subatrate in the vicinity of the surface measurable accurately and its profile shape obtainable accurately.</p> |
