发明名称 |
A semiconductor device having a hollow around a gate electrode and a method for producing the same |
摘要 |
<p>A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0595298(B1) |
申请公布日期 |
1998.01.14 |
申请号 |
EP19930117419 |
申请日期 |
1993.10.27 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
OISHI, YOSHIRO;UEDA, DAISUKE |
分类号 |
H01L21/338;H01L23/482;H01L23/522;H01L29/06;H01L29/417;H01L29/812;(IPC1-7):H01L29/812;H01L29/41 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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