| 摘要 |
PROBLEM TO BE SOLVED: To provide the defect correcting method for a phase shift mask which suppresses surface flatness after etching within permissible range by easily removing a projection defect and a flattening film and also easily remove a remaining flattening film. SOLUTION: This method deposits a 1st silicon oxide film on the substrate by using a converged ion beam so that the projection defect of the phase shift mask having the projection defect on the surface is surrounded or the silicon oxide film is near the defect, and also deposits a 2nd silicon oxide film flatly on the defect and 1st silicon oxide film by using a converged ion beam. Further, the said defect and the silicon oxide film on it and its periphery are removed together by FIB assist etching using XF2 to flatten the projection defect. The 1st and 2nd silicon oxide film which are still left are removed by this removing process. |
