Compound semiconductor light emission element especially LED

摘要

A semiconductor light emission element having a first conductivity type semiconductor substrate compound (10), a light emission layer (13), an interfacial layer (15) and a current diffusion layer (17), both of an aluminium-free second conductivity type compound semiconductor, preferably GaP. Also claimed is production of the above semiconductor light emission element (100), involving formation of the light emission layer (13) and the interfacial layer (15) on the substrate (10), and formation of the current diffusion layer (17) over the interfacial layer (15), the process being interrupted for a certain time for a regrowth interface to be provided on the interfacial layer surface.