发明名称 |
Process for fabricating a device using nitrogen implantation into silicide layer |
摘要 |
The invention is directed to a process for forming p+and n+gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected to a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is performed after the n-type dopant is implanted into the structure. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n+gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.
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申请公布号 |
US5851922(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970865548 |
申请日期 |
1997.05.29 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BEVK, JOZE;FUERTSCH, MATTHIAS WERNER;GEORGIOU, GEORGE E.;HILLENIUS, STEVEN JAMES |
分类号 |
H01L23/52;H01L21/225;H01L21/3205;H01L21/8238;H01L27/092;(IPC1-7):H01L21/76 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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