| 发明名称 |
Semiconductor DRAM trench capacitor |
| 摘要 |
<p>A trench capacitor with an epi layer in the lower portion of the trench. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the lower portion of the trench to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation. <IMAGE></p> |
| 申请公布号 |
EP0967653(A2) |
申请公布日期 |
1999.12.29 |
| 申请号 |
EP19990304810 |
申请日期 |
1999.06.18 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SCHREMS, MARTIN;SCHAEFER, HERBERT;MANDELMAN, JACK;STENGL, REINHARD;HOEPFNER, JOACHIM |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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