| 摘要 |
A method of forming a magnetic memory, includes, forming a first magnetic film over a substrate, forming a second magnetic film on the first magnetic film, forming a conductive film on second magnetic film, and forming a resist pattern on the conductive film. Then, a first pattern is formed by etching the conductive film using the resist pattern as a mask and the resist pattern is removed. Then, a first magnetic substance layer is formed by etching the second magnetic film using the first pattern as a mask.
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