发明名称 |
Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof |
摘要 |
An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.
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申请公布号 |
US2002146916(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20020109001 |
申请日期 |
2002.03.29 |
申请人 |
IRINO KIYOSHI;MORISAKI YUSUKE;SUGITA YOSHIHIRO;TANIDA YOSHIAKI;IBA YOSHIHISA |
发明人 |
IRINO KIYOSHI;MORISAKI YUSUKE;SUGITA YOSHIHIRO;TANIDA YOSHIAKI;IBA YOSHIHISA |
分类号 |
H01L29/78;C23C16/30;C23C16/44;C23C16/455;H01L21/28;H01L21/314;H01L21/762;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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