| 摘要 |
PROBLEM TO BE SOLVED: To form an SOI-structure C-MOS semiconductor device which controls back channel leak and whose integration, reliability and speed are high. SOLUTION: In the SOI-structure C-MOS semiconductor device, metal source-drain regions (9a, 9b, 9c, 9d) composed of metal layers are formed on a one-conductivity-type SOI substrate (3) and an opposite-conductivity-type SOI substrate (4) installed via an insulating film on a one-conductivity-type semiconductor substrate 1, and source drain regions (6, 7, 8) composed of impurity diffusion layers are each formed on the respective SOI substrates, as well as a one-conductivity-type MIS field-effect transistor and an opposite-conductivity-type MIS field-effect transistor having a structures in which low-resistance-metal gates (11, 12) are embedded via high-permittivity gate oxide films 10 on the SOI substrate between the metal source drain regions are formed. In the one-conductivity-type MIS field-effect transistor, and opposite-conductivity-type impurity region 19, which is formed on the one-conductivity-type semiconductor substrate in the immediately lower part is used as a back channel gate electrode, the metal source region 9a is connected, and source voltage is applied. In the opposite- conductivity-type MIS field-effect transistor, the one-conductivity-type semiconductor substrate is used as a back channel gate electrode, and a constant voltage is applied.
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