| 摘要 |
PROBLEM TO BE SOLVED: To improve an output of a nitride semiconductor element of an LED, an LD or the like and to improve reliability of the element by lowering a Vf and a threshold. SOLUTION: The nitride semiconductor light emitting element comprises a first nitride semiconductor layer having an n-type impurity of 1×1017/cm3 or less, a second nitride semiconductor layer having an n-type impurity of 3×1018/cm3 or more, and a third nitride semiconductor layer having an n-type impurity of 1×1017/cm3 or less sequentially formed from a substrate side between the substrate and an active layer. An n-type electrode is formed at the second nitride semiconductor layer, and the first nitride semiconductor layer is formed of an AlGaN. |
