| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of copper seed layer in ULSI metallization which is simple at a low cost, suitable for a substrate having a via with a large aspect ratio and can prevent problems generated by a reactive by- products. SOLUTION: A diffusion barrier layer is formed in a substrate. A replacing layer is formed in a diffusion barrier layer, and a part of a replacing layer is replaced with a thin copper film in mixture solution including a replacing reactant. Activation copper ion and a substance restraining oxidation of silicon are incorporated in mixture solution. A replacing layer is formed of a polysilicon layer, a non-crsytalline silicon layer or a TaSix layer. A diffusion barrier layer is formed of a TiN layer, a Ta layer, a TaN layer or a TaSix layer. A substrate has a plurality of vias and trenches. Mixture solution contains CuSO4 .5H2 O and HF. A copper layer is plated on a thin copper film. Since etchant is incorporated in mixture solution for carrying out replacement, formation of by-products of reaction is prevented.
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