| 发明名称 |
Current threshold detector |
| 摘要 |
A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the write current exceeds a first threshold, and a second MRAM test cell receiving the write current and sensing when the write current exceeds a second threshold.
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| 申请公布号 |
US2005169059(A1) |
申请公布日期 |
2005.08.04 |
| 申请号 |
US20040767428 |
申请日期 |
2004.01.29 |
| 申请人 |
PERNER FREDERICK A.;BHATTACHARYYA MANOJ K. |
发明人 |
PERNER FREDERICK A.;BHATTACHARYYA MANOJ K. |
| 分类号 |
G11C11/15;G11C5/00;G11C7/00;G11C11/16;G11C29/00;H01L21/8246;H01L27/105;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/15 |
| 代理机构 |
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