发明名称 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: An LED(Light Emitting Diode) and a method for manufacturing the same are provided to improve an optical output by emitting lights into a substrate instead of an upper clad layer and by forming a reflective film on an ohmic contact layer. CONSTITUTION: A first clad layer(13) made of N-type GaN is formed on a transparent substrate(11). An active layer(14) is formed on the first clad layer. A second clad layer(15) of P-type GaN is formed on the active layer. An ohmic contact layer(16) is formed on the second clad layer. A reflective film(17) is formed on the ohmic contact layer to reflect lights generated in the active layer. An electrode pad(18) is formed on a desired portion of the first clad layer. The reflective film(17) is made of Ag/Ni/Au or Ag/Pt/Au.
申请公布号 KR20020077703(A) 申请公布日期 2002.10.14
申请号 KR20010017443 申请日期 2001.04.02
申请人 LG ELECTRONICS INC. 发明人 LIM, SI JONG;SEO, JU OK
分类号 H01L33/10;H01L33/12;(IPC1-7):H01L33/00 主分类号 H01L33/10
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