| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multi-chip module which can be adapted to expansion of a memory capacity corresponding to high function and high performance. <P>SOLUTION: In a first semiconductor memory chip, a first semiconductor chip is mounted on the surface of a mount substrate, is mounted on the first semiconductor chip, and is provided with a bonding pad at the peripheral part. A second semiconductor memory chip has the same storage capacity and circuit function as those of the first semiconductor memory chip and is mounted in the same direction. These two memory chips are mounted on a first spacer mounted to a part excluding a prescribed area including a part, to which the bonding pad is formed, on the surface of the first semiconductor memory chip. Electrodes separately provided corresponding to the bonding pad to which selection signals of the first/second semiconductor memory chips are supplied, and a plurality of electrodes provided in common corresponding to a plurality of the bonding pads to which the same signal excluding the selection signals is respectively supplied, are provided on the surface part of the mount substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
