发明名称 MATERIAL FOR INSULATION FILM, COATING VARNISH FOR INSULATING FILM AND INSULATING FILM USING THEM, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a resin composition which has high heat resistance and low dielectric constant after heat treatment, and a semiconductor device using it. SOLUTION: The resin composition comprises a compound which is obtained by reacting a compound having a structure expressed by a general formula (1), and a dissolution accelerating compound which reacts with hydroxyl group in the former compound as a film formation element. In the general formula (1), Ar shows a group or an aromatic group having a polycyclic structure and the reference symbol (a) shows 0 or 1. R<SB>11</SB>is an organic group with hydrogen number or carbon number over 1. When (q) is an integer of 0 or more and is 2 or more, they can be the same or different. One or more of R<SB>1</SB>to R<SB>5</SB>and R<SB>6</SB>to R<SB>10</SB>is a bonded portion with Ar, and one or more thereof is hydroxyl group, and others show any of hydrogen, a group with alicyclic structure, organic group and carboxyl group of 1 or more and 10 or less carbon numbers. One or more of R<SB>11</SB>, R<SB>1</SB>to R<SB>5</SB>and R<SB>6</SB>to R<SB>10</SB>show a group which has an alicyclic structure. X shows any of -O-, -NHCO-, -CONH-, -COO- and -OCO-. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006269833(A) 申请公布日期 2006.10.05
申请号 JP20050087234 申请日期 2005.03.24
申请人 SUMITOMO BAKELITE CO LTD 发明人 MURATA MITSURU;ENOKI HISAFUMI
分类号 H01L21/312;C07C233/75;C08G73/22;C08G85/00;C09D5/25;C09D167/00;C09D171/08;C09D177/00 主分类号 H01L21/312
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