Nonvolatile memory device controlling common source line for improving read characteristic

摘要

A non-volatile memory device capable of improving a read characteristic includes memory blocks, each memory block having a plurality of word lines. A common source line is arranged to be shared by the memory blocks. A first transistor is connected to the common source line, and a voltage higher than a power supply voltage is applied to a gate of the first transistor during a read operation. A second transistor connects the first transistor to a reference voltage during the read operation.