发明名称 GATE DIELECTRIC LAYERS AND METHODS OF FABRICATING GATE DIELECTRIC LAYERS
摘要 A method of forming a gate dielectric layer includes forming a gate dielectric layer over a substrate. The gate dielectric layer is processed with carbon-containing ions. The gate dielectric layer is thermally processed, thereby providing the gate dielectric layer with a level of carbon between about 1 atomic % and about 20 atomic %.
申请公布号 US2008096394(A1) 申请公布日期 2008.04.24
申请号 US20060551577 申请日期 2006.10.20
申请人 发明人 CHEN CHI-CHUN;YEH MATT;CHEN SHIH-CHANG;LIANG MONG-SONG;CHEN JENNIFER;LEE DA-YUAN
分类号 H01L21/31 主分类号 H01L21/31
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