发明名称 Nichtflüchtiger Speicher mit verbesserter Auslesegeschwindigkeit beim Initialisieren
摘要 A non-volatile memory device is disclosed that can reduce the time required for the initialization process. A non-volatile memory device includes a non-volatile memory array having a plurality of pages. Each page includes a plurality of non-volatile memory cells, a first region for storing data, and a second region for storing control data that is associated with the data of the first region. The non-volatile memory device further includes a read out unit for reading out data from the pages, and a data buffer for temporarily storing data that has been read out from the pages by the read out unit. When reading out the control data, the read out unit reads out the second regions, across a plurality of pages, at one time.
申请公布号 DE602005007300(D1) 申请公布日期 2008.07.17
申请号 DE20056007300T 申请日期 2005.08.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. 发明人 TOYAMA, MASAYUKI;KIYOHARA, TOKUZO
分类号 G11C8/12;G11C16/20 主分类号 G11C8/12
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