发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which solves the problem of development defects in the production of semiconductor devices and is excellent also in suitability to halftone exposure. SOLUTION: The positive type photoresist composition contains: a compound which contains at least (A1) a sulfonate compound of a sulfonium and (A2) a sulfonate compound or a disulfonyl diazomethane compound of N- hydroxyimide and generates an acid when irradiated with active light or radiation; and a resin which contains repeating units each having a specified lactone structure and is decomposed by the action of the acid to have its alkali solubility increased.
申请公布号 JP2002303980(A) 申请公布日期 2002.10.18
申请号 JP20010108627 申请日期 2001.04.06
申请人 FUJI PHOTO FILM CO LTD 发明人 FUJIMORI TORU;KODAMA KUNIHIKO;SATO KENICHIRO;AOSO TOSHIAKI
分类号 C08F20/12;G03F7/004;G03F7/039;H01L21/027 主分类号 C08F20/12
代理机构 代理人
主权项
地址