发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which solves the problem of development defects in the production of semiconductor devices and is excellent also in suitability to halftone exposure. SOLUTION: The positive type photoresist composition contains: a compound which contains at least (A1) a sulfonate compound of a sulfonium and (A2) a sulfonate compound or a disulfonyl diazomethane compound of N- hydroxyimide and generates an acid when irradiated with active light or radiation; and a resin which contains repeating units each having a specified lactone structure and is decomposed by the action of the acid to have its alkali solubility increased. |
申请公布号 |
JP2002303980(A) |
申请公布日期 |
2002.10.18 |
申请号 |
JP20010108627 |
申请日期 |
2001.04.06 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
FUJIMORI TORU;KODAMA KUNIHIKO;SATO KENICHIRO;AOSO TOSHIAKI |
分类号 |
C08F20/12;G03F7/004;G03F7/039;H01L21/027 |
主分类号 |
C08F20/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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