POSITIVE TYPE PHOTORESIST COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a positive type photoresist composition for exposure with far UV having high resolving power, good fitness for a halftone phase shift mask (side lobe light resistance) and lowered density dependency. SOLUTION: The positive type photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B) two polymers each having specified repeating units each having a group which is decomposed by the action of the acid and (C) an acid diffusion inhibitor.