| 摘要 |
A CMOS image sensor is provided to prevent the number of electronics from being reduced by light loss. An epi layer(110) is formed in a semiconductor substrate(100). A gate insulating layer(120) and a gate electrode(130) are formed on a part of the semiconductor substrate. An inter-layer insulating film(140) is formed in the semiconductor substrate front board and is planarized. The partial region of the inter-layer insulating film is etched. The etched epi layer is grown up. The inter-layer insulating film is removed and the photoresist(150) is formed on the partial region of the semiconductor substrate. The first and second conductive type diffusion regions(180, 190) are formed. A conductive type diffusion region is formed by injecting ions to the epi layer by using the photoresist as a mask.
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