SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for bonding a substrate is provided to avoid the peeling problem caused by gas generation and to form a strong and firm bonding event though materials which relatively occurs creates relatively a large amount of gas in thermal curing. CONSTITUTION: A method for bonding a substrate comprises a step of inserting a precursor layer of adhesive layer between bonded substrates and heating the precursor layer. A substrate is formed with a gas-permeable layer on the side contacting the substrate with the adhesive layer precursor of one or both substrates is are used. The gas permeability layer forms a coating layer containing a silicon material and imparts gas permeability by heating the coating film.