| 摘要 |
PROBLEM TO BE SOLVED: To form a nitride film having a prescribed thickness on a base film, while suppressing reduction of a thickness of the base film containing carbon atoms.SOLUTION: A film deposition method for forming a nitride film on a substrate placed in a treatment vessel of a film deposition apparatus, and having a carbon-containing film containing carbon atoms includes a protection film formation process for forming a protection film on the carbon-containing film by plasma of first reaction gas including gas of nitride species not containing hydrogen atoms and inert gas.SELECTED DRAWING: Figure 14 |
