发明名称 静電容量型圧力センサ及び入力装置
摘要 A dielectric layer (33) is formed on the top surface of a fixed electrode (32). By causing the top surface of the dielectric layer (33) to recede downwards, a recess (33a) is formed in the top surface of the dielectric layer (33). An upper substrate (35a) is layered on the top surface of the dielectric layer (33) so as to cover the recess (33a). From a part of the upper substrate (35a), specifically a region positioned above the recess (33a), a conductive diaphragm (35) having a thin film shape is formed. In the region of the dielectric layer (33) opposite of the diaphragm (35), the ratio of where the dielectric layer is present on the circular perimeter centered on said opposite region varies according to the distance from the center of the opposite region.
申请公布号 JP5974939(B2) 申请公布日期 2016.08.23
申请号 JP20130048531 申请日期 2013.03.11
申请人 オムロン株式会社 发明人 井上 勝之;奥野 敏明;古村 由幸
分类号 G01L1/14;G01L5/00;G06F3/044;H01L29/84 主分类号 G01L1/14
代理机构 代理人
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