发明名称 Ni SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a Ni sputtering target to which sputtering can be stably performed even in the case where sputtering gas pressure is low.SOLUTION: An orientation degree R{220} of a {220} plane, which is calculated in the case where X-ray diffraction intensity from a {111} plane is I{111}, X-ray diffraction intensity from a {200} plane is I{200}, and X-ray diffraction intensity from a {220} plane is I{220} on a sputtering surface, and X-ray diffraction intensity from the {111} plane is I{111}, X-ray diffraction intensity from the {200} plane is I{200}, and X-ray diffraction intensity from the {220} plane is I{220} on a randomly oriented standard sample, is made larger than an orientation degree R{111} of the {111} plane and an orientation degree R{200} of the {200} plane, surface roughness of the sputtering surface is within a range of 1.00 μm or more and 6.30 μm or less at arithmetic average roughness Ra, and an average crystal grain diameter of the sputtering surface is within a range of 50 μm or more and 250 μm or less.SELECTED DRAWING: None
申请公布号 JP2016151039(A) 申请公布日期 2016.08.22
申请号 JP20150028766 申请日期 2015.02.17
申请人 MITSUBISHI MATERIALS CORP 发明人 MISEKI KENICHIRO;NONAKA SOHEI
分类号 C23C14/34 主分类号 C23C14/34
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