| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element and a manufacturing method of the same, which inhibits an electron and a hole from being captured by threading dislocation.SOLUTION: A light emitting element 100 has an n-type semiconductor layer, a luminescent layer 160 on the n-type semiconductor layer and a p-type semiconductor layer on the luminescent layer 160. The light emitting element 100 has a plurality of pits K1 which reach from the n-type semiconductor layer to the p-type semiconductor layer. The n-type semiconductor layer has an n-side electrostatic breakdown voltage layer 140. The n-side electrostatic breakdown voltage layer 140 has an n-type GaN layer 142 which includes starting points J1 of the plurality of pits K1 and a ud-GaN layer 143 which is located adjacent to the n-type GaN layer 142 and includes part of the plurality of pits K1. At least either one of the n-type GaN layer 142 and the ud-GaN layer 143 has an In-doped layer doped with In. An In composition X of the In-doped layer is within a range from larger than 0 to not higher than 0.0035.SELECTED DRAWING: Figure 3 |
