发明名称 PLASMA PROCESSING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing method and device using a high frequency power source, wherein impedance matching is optimized. SOLUTION: An impedance measuring device 6 by which the impedance at the transmission path between an electrode 2 on the load side in the middle of plasma discharge and an impedance matching device 3 can be measured is arranged and the result of the measured impedance is feed-backed to an impedance controlling device 7, so that the inductance component generated between the transmission path is held to a minimum and the loss in electric power is held to a minimum.
申请公布号 JP2002316040(A) 申请公布日期 2002.10.29
申请号 JP20010125455 申请日期 2001.04.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INAHATA TAKEHIDE;KUBOTA SABURO;KITAI TAKAHIRO
分类号 H05H1/46;B01J19/08;H01L21/205;H01L21/302;H01L21/3065;H03H7/40 主分类号 H05H1/46
代理机构 代理人
主权项
地址