发明名称 |
PLASMA PROCESSING METHOD AND DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method and device using a high frequency power source, wherein impedance matching is optimized. SOLUTION: An impedance measuring device 6 by which the impedance at the transmission path between an electrode 2 on the load side in the middle of plasma discharge and an impedance matching device 3 can be measured is arranged and the result of the measured impedance is feed-backed to an impedance controlling device 7, so that the inductance component generated between the transmission path is held to a minimum and the loss in electric power is held to a minimum. |
申请公布号 |
JP2002316040(A) |
申请公布日期 |
2002.10.29 |
申请号 |
JP20010125455 |
申请日期 |
2001.04.24 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
INAHATA TAKEHIDE;KUBOTA SABURO;KITAI TAKAHIRO |
分类号 |
H05H1/46;B01J19/08;H01L21/205;H01L21/302;H01L21/3065;H03H7/40 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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