发明名称 |
High quality log likelihood ratios determined using two-index look-up table |
摘要 |
A nonvolatile memory controller includes memory storage configured to store a two-index look-up table that includes a Log-Likelihood Ratio (LLR), hard-and-soft-decision bits associate with the LLR and a neighboring cell read pattern associated with the LLR. Read circuitry is configured to perform a plurality of reads of a cell of a nonvolatile memory storage module at different read voltage levels to generate target cell hard-and-soft-decision bits and configured to read neighboring cells to generate neighboring cell reads. Neighboring cell processing circuitry combines the neighboring cell reads to generate a neighboring cell read pattern. Look-up circuitry accesses the two-index look-up table using the target cell hard-and-soft-decision bits and the neighboring cell read pattern to identify the corresponding LLR for use in Low-Density Parity Check (LDPC) decoding of a codeword stored in the nonvolatile memory storage module. |
申请公布号 |
US9450610(B1) |
申请公布日期 |
2016.09.20 |
申请号 |
US201414557214 |
申请日期 |
2014.12.01 |
申请人 |
Microsemi Storage Solutions (US), Inc. |
发明人 |
Micheloni Rino;Marelli Alessia;Norrie Christopher I. W. |
分类号 |
H03M13/00;H03M13/11;G06F11/10 |
主分类号 |
H03M13/00 |
代理机构 |
Glass and Associates |
代理人 |
Glass and Associates ;Glass Kenneth |
主权项 |
1. A method comprising:
storing one or more two-index Log-Likelihood Ratio (LLR) look-up table in a memory controller, the one or more two-index LLR look-up table including a LLR, the hard-and-soft-decision bits associated with the LLR and the neighboring cell read pattern associated with the LLR; performing a plurality of reads of a target cell of a nonvolatile memory storage module at different read voltage levels to generate a plurality of target cell hard-and-soft-decision bits associated with a bit stored in the target cell, wherein the bit stored in the target cell is part of a codeword stored in the nonvolatile memory storage module; performing reads of a plurality of neighboring cells to the target cell of the nonvolatile memory storage module to generate a plurality of neighboring cell reads, each of the neighboring cells in the plurality of neighboring cells adjoining the target cell; combining the results of the neighboring cell reads to generate a neighboring cell read pattern that corresponds to the pattern of the neighboring cell reads; and accessing the one or more two-index LLR look-up table using the plurality of target cell hard-and-soft-decision bits and the generated neighboring cell read pattern to identify the corresponding LLR; and sending the identified LLR to a Low-Density Party Check (LDPC) decoder for decoding of the codeword stored in the nonvolatile memory storage module. |
地址 |
Aliso Viejo CA US |