SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To improve flexibility in the layout of re-wiring at a wafer level CSP which saves a defect, by disconnecting a fuse. SOLUTION: After the defect has been relieved by having the fuse irradiated with a laser beam, an organic passiation film (photosensitive polyimide resin film) 5 is filled inside a fuse opening hole part 11 and thereafter, the re-wiring 2, a bump land 2A, a top layer protective film 12 and a solder bump 14 are formed on the upper part of the organic passivation film 5. In the processes after the defect has been saved, in order to prevent the dispersion of the refreshing time of a memory cell, a baking processing for hardening an elastomer layer 10 and the top layer protective film 12 is conducted at a temperature <=260 deg.C.