发明名称 METHOD FOR PRODUCING SILICON CARBIDE FINE POWDER
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide fine powder, by which the silicon carbide fine powder having a uniform particle size, especially the silicon carbide fine powder having an average particle size of <=1 &mu;m can be easily produced. SOLUTION: This method for producing the silicon carbide fine powder includes a mixing process for obtaining a mixed powder by mixing a silicon powder comprising a silicon particles containing oxygen in an amount of >=0.2 mass % and a carbon powder and a heating process for synthesizing the silicon carbide fine powder by heating the mixed powder. The reaction at a temperature not higher than the melting point of silicon at the heating process is suppressed sufficiently by the oxygen contained in the silicon particles, especially an oxide film on the surface of each particle. Thereby, it becomes possible to carry out a liquid phase reaction of silicon and carbon sufficiently at a temperature not lower than the melting point of silicon. Accordingly, a silicon carbide fine powder having a uniform particle size, e.g. a silicon carbide fine powder having an average particle size of <=1 &mu;m can be synthesized.
申请公布号 JP2002316812(A) 申请公布日期 2002.10.31
申请号 JP20010118144 申请日期 2001.04.17
申请人 AISIN CHEM CO LTD;TOYOTA CENTRAL RES & DEV LAB INC 发明人 ISHIGAMI MASAYUKI;WADA SHIGETAKA
分类号 C04B35/626;C01B31/36;C09C1/28;C09C1/44;C09C3/06 主分类号 C04B35/626
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