A METHOD OF PRODUCING A PHOTOELECTRIC CONVERSION LAYER AND A METHOD OF PRODUCING AN IMAGE PICKUP DEVICE

摘要

A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200 DEG C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200 DEG C.-400 DEG C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200 DEG C.-240 DEG C., and in case of using holes as major carriers, preferably it is set in a range of 270 DEG C.-400 DEG C.