PROCESS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR.

摘要

Complex cpds. comprise an organic cpd. (1) having a structure which acts as a ligand and an alkaline earth metal (2). In the organic cpd. (1) three or six protons are substd. by halogen atoms (3). (1) is specified to be an acetylacetone. The alkaline earth metal (2) is specified to be Ba or Sr. The halogen atom (3) is specified to be F or Cl. The process for forming a thin film of an oxide superconductor comprises (i) mixing together the gas of the complex cpds., a gas of an organometallic cpd. of a transition metal and/or its halide, (ii) adding oxygen to establish a predetermined oxygen partial pressure in the mixt., (iii) thermally decomposing this mixt. so as to deposit a film on a base. The transition metal is specified to be at least one of Cu, Ni and Ag. During thermal decompsn. the activation energy of the reaction is supplied by heating the base or irradiating it with light.