| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of an LED chip by accelerating light emission from the chip by suppressing the multiple reflection of emitted light in the chip. SOLUTION: The LED chip is constituted by successively forming a gallium nitride buffer layer, an n-type semiconductor layer 11, a light emitting layer composed of a multilayered quantum well structure layer, and a p-type semiconductor layer 12 on a translucent sapphire substrate 10 and respectively forming paired electrodes 13 and 14 on the semiconductor layer 12 and on the exposed part of the n-type semiconductor layer 11 exposed by partially etching off the p-type semiconductor layer 12 and light emitting layer. On the surface of the substrate 10 opposite to the surface on which the gallium nitride layer is formed, recessed and projecting sections 10a of about 1 μm in size are formed. |
