SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE COMPRISING VOLTAGE INTERFACE CIRCUIT

摘要

PURPOSE: A semiconductor integrated circuit device comprising a voltage interface circuit is provided, which can drive an input pad sufficiently to a power supply voltage in a pull-up mode. CONSTITUTION: A voltage interface circuit(100) is connected between an input pad(200) and an internal logic(300). The voltage interface circuit includes two PMOS transistors(MP10,MP12) operating as a voltage conversion NMOS transistor(MN10) and a pull-up transistor. The NMOS transistor has a current path connected between the input pad and the internal logic and a gate electrode connected to a power supply voltage(VDD). The NMOS transistor converts a high voltage applied to the input pad into a voltage lower than the power supply voltage. The PMOS transistor has the first current electrode connected to the input pad and the second current electrode connected to the power supply voltage. The PMOS transistor has a current path formed between the power supply voltage and a ND1 node. The PMOS transistors are controlled by control signals(PU1,PU2) being output from a signal generator(160).